Part Number
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IPI26CNE8NG |
Manufacturer
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Infineon Technologies |
Description
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Power-Transistor |
Published
|
Apr 9, 2008 |
Detailed Description
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www.DataSheet4U.com
IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
OptiMOS®2 Power-Transistor
Featur...
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Datasheet
|
IPI26CNE8NG
|
Overview
www.
DataSheet4U.
com
IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max (TO252) ID 85 25 35 V mΩ A
• Ideal for high-frequency switching and synchronous rectification Type IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
Package Marking
PG-TO263-3 26CNE8N
PG-TO252-3 25CNE8N
PG-TO262-3 26CNE8N
PG-TO220-3 26CNE8N
PG-TO251-3 25CNE8N
Maximum ratings, at T j=...
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