isc N-Channel
MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.
38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Provide all benefits of a fast switching SJ
MOSFET while not
sacrificing ease of use
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
650
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-Continuous
10.
6
A
IDM
Drain Current-Single Pulsed
29
A
PD
Total Dissipation @TC=25℃
83
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACT...