Part Number
|
IPI80N04S3-06 |
Manufacturer
|
Infineon Technologies |
Description
|
Power-Transistor |
Published
|
Nov 10, 2015 |
Detailed Description
|
OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C p...
|
Datasheet
|
IPI80N04S3-06
|
Overview
OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested
IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06
Product Summary V DS R DS(on),max (SMD version) ID
40 V 5.
4 mΩ 80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB80N04S3-06 IPI80N04S3-06 IPP80N04S3-06
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 3N0406 3N0406 3N0406
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse ...
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