Power-Transistor
www.DataSheet4U.com IPB070N06N G IPP070N06N G OptiMOS® Power-Transistor Features • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 6.7 80 V mΩ A Type IPB070N06N G IPP070N06N...
Infineon Technologies