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IPB080N06N G
IPP080N06N G
OptiMOS® Power-Transistor
Features • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant
Product Summary V DS R DS(on),max ID
SMDversion
60 7.
7 80
V mΩ A
Type
IPB080N06N G
IPP080N06N G
Package Marking
P-TO263-3-2 080N06N
P-TO220-3-1 080N06N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source
voltage Power dissipation Operating and storage tempera...