Part Number
|
IPP12CN10NG |
Manufacturer
|
Infineon |
Description
|
Power-Transistor |
Published
|
Sep 30, 2020 |
Detailed Description
|
IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Exc...
|
Datasheet
|
IPP12CN10NG
|
Overview
IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO252) ID
100 V 12.
4 mW 67 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB12CN10N G
IPD12CN10N G
IPI12CN10N G
IPP12CN10N G
Package
PG-TO263-3
PG-TO252-3
Marking
12CN10N
12CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol...
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