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com IPB12CNE8N G IPI12CNE8N G IPD12CNE8N G IPP12CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 85 12.
4 67 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPB12CN10N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Package Marking PG-TO263-3 12CNE8N PG-TO252-3 12CNE8N PG-TO262-3 12CNE8N PG-TO220-3 12CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter...

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