isc N-Channel
MOSFET Transistor
IPP50R140CP,IIPP50R140CP
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.
14Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Ultra low gate charge ·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
500
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
23
IDM
Drain Current-Single Pulsed
56
PD
Total Dissipation @TC=25℃
192
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBO...