isc N-Channel
MOSFET Transistor
IPP60R099C6,IIPP60R099C6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.
099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Provide all benefits of a fast switching super junction MOS while not
Sacrificing ease of use
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
600
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
37.
9
IDM
Drain Current-Single Pulsed
112
PD
Total Dissipation @TC=25℃
278
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT ...