Data Sheet No.
PD 60153-J
IPS042G
DUAL FULLY PROTECTED POWER
MOSFET SWITCH
Features
• • • • •
Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.
S.
D protection
Product Summary Rds(on) V clamp Ishutdown Ton/Toff 500mΩ (max) 50V 2A 1.
5µs
Description
The IPS042G is a fully protected dual low side SMART POWER
MOSFET that features over-current, over-temperature, ESD protection and drain to source active clamp.
This device combines a HEXFET® POWER
MOSFET and a gate driver.
It offers full protection and high reliability required in harsh environments.
The driver allows short switching times and provides efficient protection by turning OFF the power MOSFE...