Part Number
|
IPS12N03LBG |
Manufacturer
|
Infineon Technologies |
Description
|
Power-Transistor |
Published
|
Sep 20, 2008 |
Detailed Description
|
Type
IPD12N03LB G IPU12N03LB G
IPS12N03LB G IPF12N03LB G
OptiMOS®2 Power-Transistor
Package Marking • Qualified accor...
|
Datasheet
|
IPS12N03LBG
|
Overview
Type
IPD12N03LB G IPU12N03LB G
IPS12N03LB G IPF12N03LB G
OptiMOS®2 Power-Transistor
Package Marking • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)
com
Product Summary V DS R DS(on),max ID 30 11.
6 30 V mΩ A
• Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant
Type
IPD12N03LB G
IPS12N03LB G
IPF12N03LB G
IPU12N03LB G
Package Marking
PG-TO252-3-11 12N03LB
PG-TO251-3-11 12N03LB
PG-TO252-3-23 12N03LB
PG-TO251-3-1 12N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=...
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