isc N-Channel
MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤1.
4Ω(@VGS= 10V; ID= 2.
3A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Fast switching application.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
800
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-Continuous
3.
9
A
PD
Total Dissipation @TC=25℃
63
W
Tj
Max.
Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c) Channel-to-case thermal resista...