IR2011S

IR2011SPbF : IR2011(S)PBF High and Low Side Driver Features Product Summary  Floating channel designed for bootstrap operation  Fully operational to 200V  Tolerant to negative transient voltage, dV/dt immune  Gate drive supply range from 10 to 20V  Independent low and high side channels  Input logic HIN/LIN active high  Undervoltage lockout for both channels  3.3V and 5V logic compatible  CMOS Schmitt-triggered inputs with pull-down  Matched propagation delay for both channels VOFFSET (max) IO+/- (typ) VOUT ton/off (typ) Delay Matching (max) 200V 1.0A / 1.0A 10 – 20V 80ns & 60ns 20ns Description The IR2011 is a high power, high speed power MOSFET driver with independent high and low si.

IR2011 : IR2011(S)PBF High and Low Side Driver Features Product Summary  Floating channel designed for bootstrap operation  Fully operational to 200V  Tolerant to negative transient voltage, dV/dt immune  Gate drive supply range from 10 to 20V  Independent low and high side channels  Input logic HIN/LIN active high  Undervoltage lockout for both channels  3.3V and 5V logic compatible  CMOS Schmitt-triggered inputs with pull-down  Matched propagation delay for both channels VOFFSET (max) IO+/- (typ) VOUT ton/off (typ) Delay Matching (max) 200V 1.0A / 1.0A 10 – 20V 80ns & 60ns 20ns Description The IR2011 is a high power, high speed power MOSFET driver with independent high and low si.