PD - 95483
AUTOMOTIVE
MOSFET
Features
O O O O O O O
IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF
HEXFET® Power
MOSFET
D
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
G
VDSS = 60V RDS(on) = 8.
5mΩ
S
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extr...