Semiconductor
July 1998
IRF140, IRF141, IRF142, IRF143
28A and 25A, 80V and 100V, 0.
077 and 0.
100 Ohm, N-Channel Power
MOSFETs
Features
• 28A and 25A, 80V and 100V • rDS(ON) = 0.
077Ω and 0.
100Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device
Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power
MOSFETs are designed for applications such as switchin...