PD - 95489D
Features
l l l l l l
IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF
HEXFET® Power
MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 75V RDS(on) = 4.
5mΩ
G S
Description
This HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of TO-220AB applications.
ID =...