PD- 94423
SMPS
MOSFET
Applications High frequency DC-DC converters
IRF3000
HEXFET® Power
MOSFET RDS(on) max
0.
40W@VGS = 10V
VDSS
300V
ID
1.
6A
l
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche
Voltage and Current
S S S G
1
8
A A D D D D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Peak Diod...