Advanced Power
MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175°C Operating Temperature n Lower Leakage Current : 10 μA (Max.
) @ VDS = 100V n Lower RDS(ON) : 0.
289 Ω (Typ.
)
IRF510A
BVDSS = 100 V RDS(on) = 0.
4 Ω ID = 5.
6 A
TO-220
1 2 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source
Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode...