isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
IRF520FI
·FEATURES ·Typical RDS(on) =0.
23Ω ·Avalanche Rugged Technology ·High Current Capability ·Low Gate Charge ·175℃ Operating Temperature ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High Current ,High Speed Switching ·DC-DC&DC-AC Converters ·Motor Control ,Audio
Amplifiers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
100
V
VGS
Gate-Source
Voltage-Continuous
±20
V
ID
Drain Current-Continuous
7
A
IDM
Drain Current-Single Plused
40
A
PD
Total Dissipation @TC=25℃
35
W
Tj
Max.
Operating Junction Temperature
175
℃...