IRF530FP
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE IRF530FP
s s s s s s
V DSS 100 V
R DS(on) 0.
16 Ω
ID 10 A
s s
TYPICAL RDS(on) = 0.
12 Ω 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY APPLICATION ORIENTED CHARACTERIZATION HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
3 1 2
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTER s AUTOMOTIVE ENVRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS, Etc)
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS VDGR V GS ID ID I DM ( • ) P tot V ISO T stg Tj Parameter Drain-source
Voltage (V GS = 0) Drai...