PD -94029
IRF5805
HEXFET® Power
MOSFET
l l l l l
Ultra Low On-Resistance P-Channel
MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
VDSS
-30V
RDS(on) max
0.
098@VGS = -10V 0.
165@VGS = -4.
5V
ID
-3.
8A -3.
0A
Description
These P-channel
MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The TSOP-6 package with its customized leadframe produces a HEXFET® power
MOSFET with RDS(on) 60% less than a similar size SOT-23.
This package is ideal for applications where printed circu...