PD -94198
IRF5810
HEXFET® Power
MOSFET
l l l l l
Ultra Low On-Resistance Dual P-Channel
MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
VDSS
-20V
RDS(on) max (mΩ)
90@VGS = -4.
5V 135@VGS = -2.
5V
ID
-2.
9A -2.
3A
Description
These P-channel HEXFET® Power
MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required.
With two die per packag...