INCHANGE Semiconductor
isc N-Channel
Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
isc Product Specification
IRF611
·DESCRITION ·Designed for high speed applications,
such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source
Voltage Gate-Source
Voltage-Continuous
150 ±20
V V
ID Drain Current-Continuous
3.
3 A
IDM Drain Current-Single Plused
8A
PD Total Dissipation @TC=25℃
43 W
Tj Max.
Operating Junction Temperature -55~175 ℃
Tstg Storage Temperature
-55~175 ℃
·...