INCHANGE Semiconductor
isc N-Channel
Mosfet Transistor
·FEATURES ·RDS(on) =0.
4Ω ·9A and 150V ·single pulse avalanche energy rated ·SOA is Power- Dissipation Limited ·Linear Transfer Characteristics ·High Input Impedance
isc Product Specification
IRF631
·DESCRITION ·Designed for high speed applications,
such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source
Voltage Gate-Source
Voltage-Continuous
150 ±20
V V
ID Drain Current-Continuous
9A
IDM Drain Current-Single Plused
36 A
PD Total Dissipation @TC=25℃
75 W
Tj Max.
Operating Junction Temperatu...