MOSFET
IRF634
N-channel
mosfet transistor
INCHANGE
Features
With TO-220 package Simple drive requirements Fast switching V DSS=250V; RDS(ON)0.
45 ;I D=8.
1A 1.
gate 2.
drain 3.
source
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
VDSS
Drain-source
voltage (VGS=0)
VGS Gate-source
voltage
ID Drain Current-continuous@ TC=25
Ptot Total Dissipation@TC=25
Tj Max.
Operating Junction temperature
Tstg Storage temperature
RATING 250 20 8.
1 74 150
-65~150
UNIT V V A W
Electrical Characteristics Tc=25
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-source breakdown
voltage VGS=0; ID=0.
25mA
VGS(TH) Gate threshold
voltage
VDS= VGS; ID=0.
25mA
RDS(ON) Drain-source on-stage resistance VGS=...