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IRF640S
N - CHANNEL 200V - 0.
150Ω - 18A TO-263 MESH OVERLAY ™
MOSFET
TYPE IRF640S
s s s s
V DSS 200 V
R DS(on) 0.
18 Ω
ID 18 A
TYPICAL RDS(on) = 0.
150 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 1
DESCRIPTION This power
MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY™ process.
This technology matches and improves the performances compared with standard parts from various sources.
D2PAK TO-263 (suffix ”T4”)
APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S...