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IRF640T
N-channel 200V - 0.
15Ω - 15A - TO-220 MESH OVERLAY™ Power
MOSFET
General features
Type IRF640T
■ ■ ■
VDSS 200V
RDS(on) 0.
16Ω
ID 15A
Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances
TO-220
3 1 2
Description
This Power
MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.
This technology matches and improves the performances compared with standard parts from various sources.
Internal schematic diagram Applications
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Switching application
Order codes
Part number IRF640T Marking IRF640T Package TO-220 Packaging Tube
October 2006
Rev 1
1/12
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DataSheet 4 U .
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