l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free (only the TO-220AB
version is currently available in a
Deslecardi-pfrteieonconfiguration)
Fifth Generation HEXFET® Power
MOSFETs from
International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per
silicon area.
This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package...