PD - 97183
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IRF6631
RDS(on) Qoss
7.
3nC
DirectFET Power
MOSFET
Typical values (unless otherwise specified)
l l l l l l l l l
RoHS compliant containing no lead or bromide Low Profile (0.
6 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET applications Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques
VDSS Qg
tot
VGS Qgd
4.
4nC
RDS(on) Qgs2
1.
1nC
30V max ±20V max 6.
0mΩ @ 10V 8.
3mΩ @ 4.
5V
Qrr
10nC
Vgs(th)
1.
8V
12nC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.
7,8 for details) SQ SX ST MQ MX...