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PD - 97006
IRF6645
DirectFET Power
MOSFET
l l l l l l l l l
RoHs Compliant Containing No Lead and Bromide Low Profile (0.
7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
4.
8nC
RDS(on)
28mΩ@ 10V
100V max ±20V max
Vgs(th)
4.
0V
14nC
SJ
Applicable DirectFET Outline and Substrate Outline (see p.
7,8 for details) SH SJ SP MZ MN
DirectFET ISOMETRIC
Description...