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PD - 97039
IRF6662
DirectFET™ Power
MOSFET
Typical values (unless otherwise specified)
Lead and Bromide Free Low Profile (0.
7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques
VDSS Qg
tot
VGS Qgd
6.
8nC
RDS(on) Vgs(th)
3.
9V
100V max ±20V max 17.
5mΩ@ 10V 22nC
MZ
Applicable DirectFET Outline and Substrate Outline (see p.
7,8 for details)
SQ SX ST MQ MX MT MZ
DirectFET™ ISOMETRIC
Description
The IRF6662 combines the latest HEXFET® Power M...