PD- 94087
IRF7241
HEXFET® Power
MOSFET
q q q q
Trench Technology Ultra Low On-Resistance P-Channel
MOSFET Available in Tape & Reel
VDSS
-40V
RDS(on) max (mΩ)
41@VGS = -10V 70@VGS = -4.
5V
ID
-6.
2A -5.
0A
Description
New trench HEXFET® Power
MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
S
1
8 7
A D D D D
S
S G
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Parame...