PD - 95042
IRF7329PbF
HEXFET® Power
MOSFET
l l l l l l
Trench Technology Ultra Low On-Resistance Dual P-Channel
MOSFET Low Profile (1.
8mm) Available in Tape & Reel Lead-Free
VDSS
-12V
RDS(on) max (mW)
17@VGS = -4.
5V 21@VGS = -2.
5V 30@VGS = -1.
8V
ID
±9.
2A ±7.
4A ±4.
6A
Description
New P-Channel HEXFET ® power
MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
S1 G1 S2 G2
1 2 3 4
8 7
D1 D1 D2...