PD - 94226B
IRF7350
HEXFET® Power
MOSFET
l l l l
Ultra Low On-Resistance Dual N and P Channel
MOSFET Surface Mount Available in Tape and Reel
S1 G1 S2 G2
N - C H A N N EL M O S FE T 1 8 2 7
D1 D1
N-Ch VDSS 100V
P-Ch -100V 0.
48Ω
3
6
D2 D2
4
5
P -C H A N N E L M O S F E T
RDS(on) 0.
21Ω
T op V iew
Description
These dual N and P channel HEXFET® power
MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for...