PD - 95202
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IRF7402PbF
HEXFET® Power
MOSFET
S S S G
1 2 3 4 8 7
Generation V Technology Ultra Low On-Resistance N-Channel
MOSFET Very Small SOIC Package Low Profile (1.
1mm) Available in Tape & Reel Fast Switching Lead-Free Description
A A D D D D
VDSS = 20V RDS(on) = 0.
035Ω
6 5
Top View
Fifth Generation HEXFET® power
MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide varie...