PD - 9.
1245B
PRELIMINARY
IRF7403
8 7
HEXFET® Power
MOSFET
l l l l l l l
Generation V Technology Ultra Low On-Resistance N-Channel
Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
S S S G
1 2
A A D D D D
VDSS = 30V RDS(on) = 0.
022Ω
3
6
4
5
T op V iew
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8...