PD- 94055A
SMPS
MOSFET
Applications High frequency DC-DC converters
IRF7478
HEXFET® Power
MOSFET RDS(on) max (mΩ)
26@VGS = 10V 30@VGS = 4.
5V
l
VDSS
60V
ID
4.
2A 3.
5A
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche
Voltage and Current
S S S G
1
8
A A D D D D
2
7
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to...