PD -91865B
IRF7555
HEXFET® Power
MOSFET
Trench Technology q Ultra Low On-Resistance q Dual P-Channel
MOSFET q Very Small SOIC Package q Low Profile (1.
1mm) q Available in Tape & Reel
q
S1 G1 S2 G2
1
8
D1 D1 D2 D2
2
7
VDSS = -20V RDS(on) = 0.
055Ω
3
6
4
5
T o p V ie w
Description
New trench HEXFET® power
MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8™ package has hal...