PD - 93894A
IRF7700
HEXFET® Power
MOSFET
l l l l l
Ultra Low On-Resistance P-Channel
MOSFET Very Small SOIC Package Low Profile ( 1.
1mm) Available in Tape & Reel
VDSS
-20V
RDS(on) max
0.
015@VGS = -4.
5V 0.
024@VGS = -2.
5V
ID
-8.
6A -7.
3A
Description
HEXFET® power
MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides the de1 2 3 4 1= 2= 3= 4= D S S G
D
8 7
G
6
S
8= 7= 6= 5= D S S D
5
signer with an extremely efficient and reliable device for use in battery and load management.
The TSSOP-8 p...