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PD - 97275
IRF7862PbF
HEXFET® Power
MOSFET
Applications l Synchronous
MOSFET for Notebook Processor Power l Synchronous Rectifier
MOSFET for Isolated DC-DC Converters Benefits l Very Low RDS(on) at 4.
5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche
Voltage and Current l 20V VGS Max.
Gate Rating l 100% tested for Rg l Lead-Free
VDSS
30V
3.
7m:@VGS = 10V
A A D D D D
RDS(on) max
Qg
30nC
S S S G
1 2 3 4
8 7
6 5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source
Voltage Gate-to-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS ...