PD - 94497
SMPS
MOSFET
Applications High frequency DC-DC converters UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) Fully Characterized Avalanche
Voltage and Current Typical RDS(on) = 12mΩ
IRF8010
HEXFET® Power
MOSFET
VDSS
100V
RDS(on) max
15mΩ
ID
80A
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Peak Diode Recovery dv/dt Operating Ju...