INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
isc Product Specification
IRF823
FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source
Voltage Gate-Source
Voltage-Continuous
450 ±20
V V
ID Drain Current-Continuous
2.
0 A
IDM Drain Current-Single Pluse
7A
PD Total Dissipation @TC=25℃
50 W
TJ
Max.
Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
isc website:www.
iscsemi.
cn
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