MOSFET
IRF830
N-channel
mosfet transistor
INCHANGE
Features
With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.
5 ;I 1.
gate 2.
drain 3.
source
D=4.
5A
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
VDSS
Drain-source
voltage (VGS=0)
VGS Gate-source
voltage
ID Drain Current-continuous@ TC=25
Ptot Total Dissipation@TC=25
Tj Max.
Operating Junction temperature
Tstg Storage temperature
RATING 500 20 4.
5 100 150
-65~150
UNIT V V A W
Electrical Characteristics Tc=25
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS VGS(TH) RDS(ON)
IGSS IDSS VSD
Drain-source breakdown
voltage VGS=0; ID=0.
25mA
Gate threshold
voltage
VDS= VGS; ID=0.
25mA
Drain-source on-sta...