isc N-Channel
Mosfet Transistor
INCHANGE Semiconductor
IRF830A
FEATURES ·Drain Current –ID=5A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switch Mode Power Supply ·Uninterruptable Power Supply ·High speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage
500
V
VGS
Gate-Source
Voltage-Continuous
±30
V
Drain Current-Continuous@ TC=25℃
5
ID
A
Drain Current-continuous@ TC=100℃
3.
2
IDM
Drain Current-Single Plused
20
A
PD
Total Dissipation @TC=25℃
74
W
Tj
Max.
Operating...