IRF9150
Data Sheet February 1999 File Number
2280.
3
-25A, -100V, 0.
150 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power
MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power
MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA49230.
Features
• -25A, -100V • rDS(ON) = ...