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PD - 95260
IRF9410PbF
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Generation V Technology Ultra Low On-Resistance N-Channel
MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free
HEXFET® Power
MOSFET
S S S G
1 8
A A D D D D
2
7
VDSS = 30V RDS(on) = 0.
030Ω
3
6
4
5
Top View
Recommended upgrade: IRF7403 or IRF7413 Lower profile/smaller equivalent: IRF7603
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides th...