PD - 95135
IRF9952PbF
l l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N and P Channel
MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free
HEXFET® Power
MOSFET
S1 G1 S2 G2
N-CHANNEL
MOSFET 1 8 2 7
D1 D1 D2 D2
N-Ch P-Ch VDSS 30V -30V
3
6
4
5
P-CHANNEL
MOSFET
Top View
RDS(on) 0.
10Ω 0.
25Ω
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient...