PD -9.
1484B
IRF9Z24N
HEXFET® Power
MOSFET
Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -55V RDS(on) = 0.
175Ω
G
ID = -12A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-indus...