isc N-Channel
MOSFET Transistor IRFB260N,IIRFB260N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤40mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Fully Characterized Avalanche
Voltage and Current
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
200
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
56
IDM
Drain Current-Single Pulsed
220
PD
Total Dissipation @TC=25℃
380
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAME...