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PD - 97075
DIGITAL AUDIO
MOSFET
Features
• Key Parameters Optimized for Class-D Audio Amplifier Applications • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved Efficiency • Low QRR for Better THD and Lower EMI • 175°C Operating Junction Temperature for Ruggedness • Can Deliver up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier
G S D
IRFB4019PbF
Key Parameters
150 80 13 5.
1 2.
4 175
D
VDS RDS(ON) typ.
@ 10V Qg typ.
Qsw typ.
RG(int) typ.
TJ max
V m: nC nC Ω °C
G
D
S
TO-220AB
D S
G
Description
Gate
Drain
Source
This Digital Audio
MOSFET is specifically designed for Class-D audio amplifier applications.
This ...